2SK1317 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

5,000
Body to Drain Diode Reverse
Recovery Time
2,000
1,000
500
200 ^{di/dt = 100 A/µs, Ta = 25°C}
V_GS = 0
100 ^{Pulse Test}
50
0.05 0.1 0.2 0.5 1.0 2
5
Reverse Drain Current I_DR (A)
1,000
800
600
400
200
0
Dynamic Input Characteristics
20
V_DD = 250V
400 V
16
600 V
V_GS
12
V_DS
8
V_DD = 600 V
400 V
4
250 V
I_D = 2.5 A
20 40 60 80
Gate Charge Qg (nc)
0
100
10,000
1,000
2SK1317
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
100
Coss
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1,000
500
Switching Characteristics
V_GS = 10 V
V_DD
=•
•
30
V
PW = 2µs, duty < 1%
t_{d (off)}
200
100
t_f
50
t_r
20
t_{d (on)}
10
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)
5