2SK1317 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1317
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
I_D = 3 A
30
20
2A
1A
10
0.5 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
20
16
V_GS = 15 V
Pulse Test
I_D = 2 A
0.5 A, 1 A
12
8
4
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Static Drain to Source on State
Resistance vs. Drain Current
50
20
V_GS = 10 V
15 V
10
5
2
Pulse Test
1.0
0.5
0.1 0.2
0.5 1.0 2
5 10
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
10
V_DS = 20 V
5 _{Pulse Test}
2
–25°C
Ta = 25°C
1.0
75°C
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current I_D (A)
4