2SK1317 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
5
15 V
10 V
Pulse Test
4
8V
7V
3
6V
2
5V
1
V_GS = 4 V
0
20 40 60 80 100
Drain to Source Voltage V_DS (V)
2SK1317
Maximum Safe Operation Area
10
3
1.0
0.3
0.1
0.03
DC _{OPpWer=at1io0nm(TsC}^{1(m1=1sS205h0°o1µ}_Ct0)s)^µs
Operation in this area
is limited by R_{DS (on)}
Ta = 25°C
0.01
10 30 100 300 1,000 3,000 10,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
2.0
1.6
V_DS = 20 V
Pulse Test
1.2
0.8
75°C
T_C = 25°C
0.4
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
3