2SK1317 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
1500
V
±20
V
2.5
A
7
A
2.5
A
100
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS 1500
Gate to source leak current
I _GSS
—
Zero gate voltage drain current I_DSS
—
Gate to source cutoff voltage V_GS(off) 2.0
Static drain to source on state R_DS(on) —
resistance
Forward transfer admittance |yfs|
0.45
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note: 1. Pulse test
Typ
—
—
—
—
9
0.75
990
125
60
17
70
110
60
0.9
1750
Max
—
±1
500
4.0
12
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 1200 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 2 A, V_GS = 15 V *¹
I_D = 1 A, V_DS = 20 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 2 A, V_GS = 10 V,
R_L = 15 Ω
I_F = 2 A, V_GS = 0
I_F = 2 A, V_GS = 0,
di_F/dt = 100 A/µs
2