HN58S65A Datasheet, PDF (4/18 Pages) Hitachi Semiconductor – 64 k EEPROM (8-kword x 8-bit) Ready/Busy function

HN58S65A Series
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range *²
V_CC
–0.6 to +7.0
V
Vin
–0.5*¹ to +7.0*³
V
Topr
0 to +70
˚C
Storage temperature range
Tstg
–55 to +125
˚C
Notes: 1. Vin min : –3.0 V for pulse width ≤ 50 ns.
2. Including electrical characteristics and data retention.
3. Should not exceed V_CC + 1.0 V.
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
Input voltage
Operating temperature
V_CC
V_SS
V_IL
V_IH
Topr
2.2
3.0
0
0
–0.3*¹
—
V_CC × 0.7
—
0
—
Notes: 1. V_IL min: –1.0 V for pulse width ≤ 50 ns.
2. V_IH max: V_CC + 1.0 V for pulse width ≤ 50 ns.
Max
3.6
0
0.4
V_CC + 0.3*²
70
Unit
V
V
V
V
˚C
DC Characteristics (Ta = 0 to + 70˚C, V_CC = 2.2 to 3.6 V)
Parameter
Input leakage current
Output leakage current
Standby V_CC current
Operating V_CC current
Output low voltage
Output high voltage
Symbol Min
I _LI
—
I _LO
—
I _CC1
—
I _CC2
—
I _CC3
—
—
Typ
—
—
1 to 2
—
—
—
V_OL
—
—
V_OH
V_CC × 0.8 —
Max
2
2
3.5
500
6
12
0.4
—
Unit
µA
µA
µA
µA
mA
mA
V
V
Test conditions
V_CC = 5.5 V, Vin = 5.5 V
V_CC = 5.5 V, Vout = 5.5/0.4 V
CE = V_CC
CE = V_IH
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs at V_CC = 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 150 ns at V_CC = 3.6 V
I_OL = 1.0 mA
I_OH = –100 µA