3SK318 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

3SK318
Forward Transfer Admittance
vs. Gate1 Voltage
30
V _DS = 3.5 V
V_G2S = 3 V
24
2.5 V
18
12
2V
6
1.5 V
1V
0
0.4 0.8 1.2 1.6 2.0
Gate1 to Source Voltage V_G1S (V)
Power Gain vs. Drain Current
25
20
15
10
5
V _DS = 3.5 V
V _G2S = 3 V
f = 900 MHz
0
5
10 15 20 25
Drain Current I _D (mA)
Noise Figure vs. Drain Current
5
V _DS = 3.5 V
4
V _G2S = 3 V
f = 900 MHz
3
2
1
0
5
10 15 20 25
Drain Current I _D (mA)
Power Gain vs. Drain to Source Voltage
25
20
15
10
5
V _G2S = 3 V
I _D = 10 mA
f = 900 MHz
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
4