3SK318 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

3SK318
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Electrical Characteristics (Ta = 25°C)
Ratings
Unit
6
V
±6
V
±6
V
20
mA
100
mW
150
°C
–55 to +150
°C
Item
Symbol Min
Drain to source breakdown
voltage
V 6 _(BR)DSS
Gate1 to source breakdown
voltage
V_(BR)G1SS ±6
Gate2 to source breakdown
voltage
V_(BR)G2SS ±6
Gate1 to source cutoff current I_G1SS
—
Gate2 to source cutoff current I_G2SS
—
Gate1 to source cutoff voltage V_G1S(off) 0.5
Gate2 to source cutoff voltage V_G2S(off) 0.5
Drain current
I _DS(op)
0.5
Forward transfer admittance |y_fs|
18
Input capacitance
C_iss
1.3
Output capacitance
C_oss
0.9
Reverse transfer capacitance C_rss
—
Power gain
PG
18
Noise figure
NF
—
Typ Max Unit Test Conditions
—
—
V
I_D = 200µA, V_G1S = V_G2S = 0
—
—
V
I_G1 = ±10µA, V_G2S = V_DS = 0
—
—
V
I_G2 = ±10µA, V_G1S = V_DS = 0
—
±100 nA
—
±100 nA
0.7 1.0 V
0.7 1.0 V
4
10
mA
24
32
mS
1.6 1.9 pF
1.2 1.5 pF
0.019 0.03 pF
21
—
dB
1.4 2.2 dB
V_G1S = ±5V, V_G2S = V_DS = 0
V_G2S = ±5V, V_G1S = V_DS = 0
V_DS = 5V, V_G2S = 3V
I_D = 100µA
V_DS = 5V, V_G1S = 3V
I_D = 100µA
V_DS = 3.5V, V_G1S = 1.1V
V_G2S = 3V
V_DS = 3.5V, V_G2S = 3V
I_D = 10mA , f = 1kHz
V_DS = 3.5V, V_G2S = 3V
I_D = 10mA , f= 1MHz
V_DS = 3.5V, V_G2S = 3V
I_D = 10mA , f = 900MHz
2