3SK318 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

3SK318
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
Features
• Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
• Excellent cross modulation characteristics
• Capable low voltage operation; +B= 5V
Outline
Note: Marking is “YB–”.
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-600(Z)
1st. Edition
February 1998