3SK318 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
3SK318
20
Typical Output Characteristics
V_G1S = 1.7 V
V_G2S = 3 V
16
1.6 V
1.5 V
12
1.4 V
8
1.3 V
1.2 V
4
1.1 V
1.0 V
0.9 V
0.8 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Drain Current vs.
Gate1 to Source Voltage
20
V _DS = 3.5 V _{2.5 V}
16
2.0 V
12
8
1.5 V
4
V_G2S = 1.0 V
0
1
2
3
4
5
Gate1 to Source Voltage V_G1S (V)
Drain Current vs.
Gate2 to Source Voltage
20
V _DS = 3.5 V
1.8 V
2.0 V
16
1.6 V
12
1.4 V
8
1.2 V
4
V_G1S = 1.0 V
0
1
2
3
4
5
Gate2 to Source Voltage V_G2S (V)
3