HN58X24512I Datasheet, PDF (18/20 Pages) Hitachi Semiconductor – Two-wire serial interface 512k EEPROM (64-kword ´ 8-bit)

HN58X24512I
Notes
Data Protection at V_CC On/Off
When V_CC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc)
may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional
programming, this EEPROM have a power on reset function. Be careful of the notices described below in
order for the power on reset function to operate correctly.
• SCL and SDA should be fixed to V_CC or V_SS during V_CC on/off. Low to high or high to low transition
during V_CC on/off may cause the trigger for the unintentional programming.
• V_CC should be turned off after the EEPROM is placed in a standby state.
• V_CC turn on speed (tr) should be longer than 10 us (tr > 10 µs).
Write/Erase Endurance and Data Retention Time
The endurance is 10⁵ cycles in case of page programming and 10⁴ cycles in case of byte programming (1%
cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed
less than 10⁴ cycles.
Noise Suppression Time
This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than
50 ns. Be careful not to allow noise of width more than 50 ns.
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