HN58X24512I Datasheet, PDF (13/20 Pages) Hitachi Semiconductor – Two-wire serial interface 512k EEPROM (64-kword ´ 8-bit)

HN58X24512I
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 128 bytes to
be written in a single write cycle. The page write is the same sequence as the byte write except for
inputting the more write data. The page write is initiated by a start condition, device address word,
memory address(n) and write data (Dn) with every ninth bit acknowledgment. The EEPROM enters the
page write operation if the EEPROM receives more write data (Dn+1) instead of receiving a stop condition.
The a0 to a6 address bits are automatically incremented upon receiving write data (Dn+1). The EEPROM
can continue to receive write data up to 128 bytes. If the a0 to a6 address bits reaches the last address of
the page, the a0 to a6 address bits will roll over to the first address of the same page and previous write data
will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters
internally-timed write cycle.
Page Write Operation
Device
address
1st Memory
address (n)
10100 W
Start
ACK
R/W
Note: 1. Don't care bit.
2nd Memory
address (n)
Write data (n) Write data (n+m)
ACK
ACK
ACK
ACK
Stop
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