HMN4M8D Datasheet, PDF (7/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V

HANBit
- Read Cycle No.2 (/CE Access)^*1,3,4
tRC
/CE
DOUT
tACE
tCLZ
High-Z
HMN4M8D
tCHZ
High-Z
- Read Cycle No.3 (/OE Access)^*1,5
Address
tRC
tACC
/OE
DOUT
High-Z
tOE
tOLZ
tOHZ
Data Valid
NOTES: 1. /WE is held high for a read cycle.
2. Device is continuously selected: /CE = /OE =V_IL.
3. Address is valid prior to or coincident with /CE transition low.
4. /OE = V_IL.
5. Device is continuously selected: /CE = V_IL
High-Z
- WRITE CYCLE NO.1 (/WE-CONTROLLED)^*1,2,3
tWC
Address
tAW
tWR1
tCW
/CE
tAS
tWP
/WE
tDW
tDH1
DIN
Data-in Valid
tWZ
tOW
DOUT
High-Z
Data Undefined (1)
URL : www.hbe.co.kr
Rev. 1.0 (May, 2002)
7
HANBit Electronics Co.,Ltd