HMN4M8D Datasheet, PDF (4/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V

HANBit
HMN4M8D
CAPACITANCE (T_A=25℃ , f=1MHz, V_CC=5.0V)
DESCRIPTION
CONDITIONS
Input Capacitance
Input/Output Capacitance
Input voltage = 0V
Output voltage = 0V
SYMBOL
C_IN
C_I/O
MAX
32
40
MIN
UNIT
-
pF
-
pF
DC AND OPERATION CHARACTERISTICS (T_A= T_OPR, V_CCmin £ V_CC≤ V_CCmax )
PARAMETER
CONDITIONS
SYMBOL MIN
TYP.
MAX
Input Leakage Current
V_IN=V_SS to V_CC
Output Leakage Current
/CE=V_IH or /OE=V_IH or /WE=V_IL
Output high voltage
I_OH=-1.0Ma
Output low voltage
I_OL= 2.1mA
Standby supply current
Standby
supply
Commerci
al
current
Industrial
Operating supply current
/CE=V_IH
/CE≥ V_CC-0.2V, 0V≤ V_IN≤ 0.2V,
or V_IN≥ V_CC-0.2V
Min.cycle,duty=100%,/CE=V_IL,
I_I/O=0㎃ ,
A₂₀<V_IL or A₂₀>V_IH A₂₁<V_IL or
A₂₁>V_IH
Power-fail-detect voltage
Supply switch-over voltage
I_LI
I_LO
V_OH
V_OL
I_SB
I_SB1
I_CC
V_PFD
V_SO
-
-
±4
-
-
±4
2.4
-
-
-
-
0.4
-
-
12
-
-
200
-
-
320
-
-
54
4.30
4.37
4.50
-
3
-
UNIT
mA
mA
V
V
㎃
mA
㎃
V
V
CHARACTERISTICS (Test Conditions)
PARAMETER
VALUE
Input pulse levels
Input rise and fall times
Input and output timing
reference levels
Output load
(including scope and jig)
0.4 to 2.2V
5 ns
1.5V
( unless otherwise specified)
See Figure 1 and 2
+5V
DOUT
1.9KΩ
DOUT
100㎊
1KΩ
1KΩ
+5V
1.9KΩ
5㎊
Figure 1.
Output Load A
Figure 2.
Output Load B
URL : www.hbe.co.kr
Rev. 1.0 (May, 2002)
4
HANBit Electronics Co.,Ltd