HMN4M8D Datasheet, PDF (3/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 5V

HANBit
HMN4M8D
TRUTH TABLE
MODE
/OE
/CE
CE2
/WE
I/O OPERATION
POWER
Not selected
X
H
X
X
High Z
Standby
Output disable
H
L
H
H
Read
L
L
H
H
Write
X
L
H
L
High Z
D_OUT
D_IN
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
PARAMETER
DC voltage applied on V_CC relative to V_SS
DC Voltage applied on any pin excluding V_CC relative
to V_SS
Operating temperature
Storage temperature
Temperature under bias
Soldering temperature
SYMBOL
V_CC
V_T
T_OPR
T_STG
T_BIAS
T_SOLDER
RATING
-0.5V to 7.0V
-0.3V to 7.0V
0 to 70°C
-40 to 85°C
-55°C to 125°C
-40°C to 85°C
260°C
CONDITIONS
Commercial
Industrial
For 10 second
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS ( T_A= T_OPR )
PARAMETER
SYMBOL
MIN
TYPICAL
Supply Voltage
Ground
Input high voltage
Input low voltage
V_CC
4.5V
5.0V
V_SS
0
0
V_IH
2.2
-
V_IL
-0.5 ²⁾
-
NOTE: 1. Overshoot: VCC+3.0V in case of pulse width ≤30ns.
2. Undershoot: -3.0V in case of pulse width ≤30ns.
MAX
5.5V
0
V_CC+0.5V ¹⁾
0.8V
URL : www.hbe.co.kr
Rev. 1.0 (May, 2002)
3
HANBit Electronics Co.,Ltd