HMN1288DV Datasheet, PDF (7/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V

HANBit
- READ CYCLE NO.3 (/OE Access)^*1,5
Address
/OE
DOUT
High-Z
tRC
tACC
tOE
tOLZ
HMN1288DV
tOHZ
Data Valid
High-Z
NOTES:
1. /WE is held high for a read cycle.
2. Device is continuously sele cted: /CE = /OE =VIL.
3. Address is valid prior to or coincident with /CE transition low.
4. /OE = V IL.
5. Device is continuously selected: /CE = V IL
- WRITE CYCLE NO.1 (/WE-CONTROLLED)^*1,2,3
Address
/CE
/WE
DIN
DOUT
tWC
tAW
tWR1
tCW
tAS
tWP
Data Undefined (1)
tDW
tDH1
Data-in Valid
tWZ
tOW
High-Z
URL : www.hbe.co.kr
7
Rev. 1.0 (June, 2004)
FinePrint pdfFactory 평 가 판 으 로 만 든 PDFhttp://www.softvision.co.kr
HANBit Electronics Co.,Ltd