HMN1288DV Datasheet, PDF (4/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V

HANBit
HMN1288DV
DC ELECTRICAL CHARACTERISTICS (T_A= T_OPR, V_CCmin ≤ V_CC ≤ V_CCmax )
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP.
MAX UNIT
Input Leakage Current
VIN=VSS to VCC
ILI
-
-
± 3.0
µA
Output Leakage Current
/CE=VIH or /OE=VIH
or /WE=VIL
ILO
-
-
± 3.0
µA
Output high voltage
IOH=-1.0mA
VOH
2.4
-
-
V
Output low voltage
IOL= 2.0mA
VOL
-
-
0.4
V
Threshold
Select
Power-fail Deselect Voltage
Voltage
(THS = VSS )
VPFD
2.8
2.9
3.0
V
Standby supply current
/CE=2.2v
ISB
-
-
0.6
㎃
/CE≥ VCC-0.2V,
Standby supply current
0V≤ VIN≤ 0.2V,
ISB1
or VIN≥ VCC-0.2V
Operating Power supply /CE=VIL, II/O=0㎃ ,
ICC
current
VIN = VIL or VIH, Read
-
-
30
µA
-
12
㎃
Supply switch-over voltage
VSO
-
2.5
-
V
NOTE: Typical values indicate operation at TA = 25℃ .
CHARACTERISTICS (Test Conditions)
PARAMETER
Input pulse levels
Input rise and fall times
Input and output timing
reference levels
Output load
(including scope and jig)
VALUE
0 to 3V
5 ns
1.5V
( unless otherwise specified)
See Figures 1and 2
DOUT
1.9KΩ
1KΩ
+5V
DOUT
100㎊
1KΩ
+5V
1.9KΩ
5㎊
Figure 1.
Output Load A
Figure 2.
Output Load B
URL : www.hbe.co.kr
4
Rev. 1.0 (June, 2004)
FinePrint pdfFactory 평 가 판 으 로 만 든 PDFhttp://www.softvision.co.kr
HANBit Electronics Co.,Ltd