HMN1288DV Datasheet, PDF (6/9 Pages) Hanbit Electronics Co.,Ltd – Non-Volatile SRAM Module 1Mbit (128K x 8-Bit), 32Pin-DIP, 3.3V

HANBit
HMN1288DV
POWER-DOWN/POWER-UP CYCLE
PARAMETER
SYMBOL
CONDITIONS
MIN
VPFD(max) to VPFD(min) VCC Fail Time
tF
300
VPFD(max) to VSS VCC Fail Time
tFB
150
VPFD(max) to VPFD(min) VCC Rise Time
tR
10
Write Protect Time
Delay after Vcc slews down
tWPT
past VPFD before SRAM is
40
W rite-protected.
Chip Enable Recovery
tCER
40
VSS to VPFD (min) VCC Rise Time
tRB
1
TYP.
-
-
-
MAX
-
-
-
UNIT
µs
µs
µs
250
µs
-
120
ms
-
-
µs
TIMING WAVEFORM
- READ CYCLE NO.1 (Address Access)*^1,2
Address
DOUT
tRC
tACC
tOH
Previous Data Valid
- READ CYCLE NO.2 (/CE Access)^*1,3,4
tRC
CE
DOUT
tACE
tCLZ
High-Z
Data Valid
tCHZ
High-Z
URL : www.hbe.co.kr
6
Rev. 1.0 (June, 2004)
FinePrint pdfFactory 평 가 판 으 로 만 든 PDFhttp://www.softvision.co.kr
HANBit Electronics Co.,Ltd