S8865-64G_15 Datasheet, PDF (9/15 Pages) Hamamatsu Corporation – Photodiode array combined with signal processing IC for X-ray detection

Photodiode arrays with amplifier
S8865-64G/-128G/-256G, S8866-64G-02/-128G-02
S8865-256G
+0.2
51.2-0
34.02
P2.54 × 12 = 30.48
(26 ×) 0.64 × 0.64
2.54
2.28
(× 4) 2.2
1
25
Photosensitive
2
26
area
6.6
CMOS1
CMOS2
40.0
1 ch
Signal processing IC chip
*²
1.6
*1: Length from the bottom of the board to the center of photosensitive area
Board: G10 glass epoxy
Connector: JAE (Japan Aviation Electronics lndustry, Limited)
PS-26PE-D4LT1-PN1
*2: Photodiode array with phosphor sheet S8865-256G only
· Material: Gd2O2S:Tb
· Phosphor thickness: 300 µm typ.
· Detectable energy range: 30 k to 100 keV
KMPDA0234EB
S8866-64G-02/-128G-02
102.4 ^+-00.3
P2.54 × 11 = 27.94
(12 ×) 0.76
Signal processing
IC chip
1
12
1.27
1.6
2.54
11.2
80.0
Photodiode 1 ch photosensitive area
Direction of scan
Fluorescent
paper*²
1.6
(4 ×) 2.2
Type no. A
S8866-64G2 8.2
S8866-128G2 8.0
*1: Length from the bottom of the board to the center of photosensitive area
Board: G10 glass epoxy
Connector: PRECI-DIP DURTAL 800-10-012-20-001101
*2: Photodiode array with phosphor sheet
· Material: Gd2O2S:Tb
· Phosphor thickness: 300 µm typ.
· Detectable energy range: 30 k to 100 keV
KMPDA0226
KMPDA0226EC
9