S8865-64G_15 Datasheet, PDF (8/15 Pages) Hamamatsu Corporation – Photodiode array combined with signal processing IC for X-ray detection

Photodiode arrays with amplifier
Dark output voltage vs. ambient temperature (measurement example)
(Ts=1000 ms)
1
S8865-64G/-128G/-256G, S8866-64G-02/-128G-02
0.1
0.01
0.001
0
10
20
30
40
50
Ambient temperature (°C)
60
KMPDB0289EA
Dimensional outlines (unit: mm)
S8865-64G/-128G
51.2 ^+-00.2
P_{2.54 × 11 = 27.94}
(× 12) 0.76
Signal processing IC chip
1
12
Photosensitive area
1.27
2.54
5.6
40.0
Photodiode 1 ch
Direction of scan
(× 4) 2.2
Phosphor sheet*²
1.6
*1: Length from the bottom of the board to the center of photosensitive area
Board: G10 glass epoxy
Connector: PRECI-DIP DURTAL 800-10-012-20-001101
*2: Photodiode array with phosphor sheet: S8865-64G/-128G only
· Material: Gd2O2S:Tb
· Phosphor thickness: 300 µm Typ.
· Detectable energy range: 30 k to 100 keV
KMPDA0233EC
8