S8865-64G_15 Datasheet, PDF (1/15 Pages) Hamamatsu Corporation – Photodiode array combined with signal processing IC for X-ray detection

Photodiode arrays with amplifier
S8865-64G/-128G/-256G
S8866-64G-02/-128G-02
Photodiode array combined with signal
processing IC for X-ray detection
The S8866-64G-02/-128G-02 are photodiode arrays with an amplifier and a phosphor sheet attached to the photosensitive
area for X-ray detection. The signal processing circuit chip is formed by CMOS process and incorporates a timing generator,
shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long,
narrow image sensor can be configured by arranging multiple arrays in a row.
As the dedicated driver circuit, the C9118 series (sold separately) is provided. (Not compatible with the S8865-256G and
S8866-64G-02.)
Features
Large element pitch: 5 types available
S8865-64G: 0.8 mm pitch × 64 ch
S8865-128G: 0.4 mm pitch × 128 ch
S8865-256G: 0.2 mm pitch × 256 ch
S8866-64G-02: 1.6 mm pitch × 64 ch
S8866-128G-02: 0.8 mm pitch × 128 ch
5 V power supply operation
Simultaneous integration by using a charge amplifier array
Sequential readout with a shift register
(Data rate: 500 kHz max.)
Low dark current due to zero-bias photodiode operation
Integrated clamp circuit allows low noise and wide dynamic range
Integrated timing generator allows operation at two
different pulse timings
Detectable energy range: 30 k to 100 keV
Applications
Line sensors for X-ray detection
Structure
Parameter
Element pitch
Element diffusion width
Element height
Number of elements
Effective photosensitive area length
Board material
*1: Refer to following figure.
Symbol*¹
P
W
H
-
-
-
S8865-64G
0.8
0.7
0.8
64
51.2
S8865-128G
0.4
0.3
0.6
128
51.2
S8865-256G S8866-64G-02 S8866-128G-02 Unit
0.2
1.6
0.8
mm
0.1
1.5
0.7
mm
0.3
1.6
0.8
mm
256
64
128
-
51.2
102.4
102.4
mm
Glass epoxy
-
Enlarged drawing of photosensitive area
W
Photodiode
P
KMPDC0072EA
www.hamamatsu.com
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