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S11850-1106_15 Datasheet, PDF (3/10 Pages) Hamamatsu Corporation – CCD image sensors
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CCD image sensors
S11850-1106, S11851-1106
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency*4
Symbol
fc
S11850-1106
Min. Typ. Max.
S11851-1106
Min. Typ. Max.
Unit
-
0.25 0.5
-
5
10
MHz
Vertical shift register capacitance
CP1V, CP2V
-
1200
-
-
1200
-
pF
Horizontal shift register capacitance
CP1H, CP2H
CP3H, CP4H
-
160
-
-
160
-
pF
Summing gate capacitance
CSG
-
10
-
-
10
-
pF
Reset gate capacitance
CRG
-
10
-
-
10
-
pF
Transfer gate capacitance
Charge transfer efficiency*5
DC output level*4
Output impedance*4
Power consumption*4 *6
CTG
-
60
-
-
60
-
pF
CTE
0.99995 0.99999 - 0.99995 0.99999 -
-
Vout
17
18
19
7
8
9
V
Zo
-
10
-
-
0.3
-
kΩ
P
-
4
-
-
75
-
mW
*4: The values depend on the load resistance. (S11850-1106: VOD=24 V, RL=100 kΩ, S11851-1106: VOD=15 V, RL=2.2 kΩ)
*5: Charge transfer efficiency per pixel, measured at half of the full well capacity
*6: Power consumption of the on-chip amplifier plus load resistance
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
S11850-1106
Min. Typ. Max.
S11851-1106
Min. Typ. Max.
Saturation output voltage
Vsat
- Fw × Sv -
- Fw × Sv -
Full well capacity
CCD node sensitivity*7
Dark current*8
Readout noise*9
Dynamic range*10
Vertical
Horizontal
Line binning
Fw
50
60
-
50
60
-
250 300
-
150 200
-
Sv
5.5
6.5
7.5
7
8
9
DS
-
50
500
-
50
500
Nr
-
6
15
-
23
28
DR
41700 50000 -
6520 8700
-
Spectral response range
Photoresponse nonuniformity*11
λ
PRNU
-
200 to
1100
-
-
±3
±10
-
200 to
1100
-
-
±3
±10
*7: The values depend on the load resistance. (S11850-1106: VOD=24 V, RL=100 kΩ, S11851-1106: VOD=15 V, RL=2.2 kΩ)
*8: Dark current is reduced to half for every 5 to 7 °C decrease in temperature.
*9: S11850-1106: Td=-40 °C, fc=20 kHz, S11851-1106: Td=25 °C, fc=2 MHz
*10: Dynamic range = Full well capacity / Readout noise
*11: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
Fixed pattern noise (peak to peak)
Photoresponse nonuniformity =
× 100 [%]
Signal
Unit
V
ke-
μV/e-
e-/pixel/s
e- rms
-
nm
%
3
 ▷