S8980_S10810_15 Datasheet, PDF (2/10 Pages) Hamamatsu Corporation – CCD area image sensors

CCD area image sensors
S8980, S10810-11
Absolute maximum ratings (Ta=25 °C)
Parameter
Storage temperature
Operating temperature
Total dose irradiation
OD voltage
RD voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Vcc voltage
Symbol
Min.
Typ.
Max.
Unit
Tstg
-20
-
+70
°C
Topr
0
-
+40
°C
D
-
-
50
Gy
VOD
-0.5
-
+20
V
VRD
-0.5
-
+18
V
VSG
-15
-
+15
V
VOG
-15
-
+15
V
VRG
-15
-
+15
V
VTG
-15
-
+15
V
VP1V, VP2V
-15
-
+15
V
VP1H, VP2H
-15
-
+15
V
Vcc
0
-
+7
V
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Output transistor drain voltage
VOD
12
15
-
V
Reset drain voltage
VRD
12
13
14
V
Output gate voltage
VOG
-0.5
2
5
V
Substrate voltage
Vss
-
0
-
V
Vertical shift register
High
VP1VH, VP2VH
0
3
6
V
clock voltage
Low
VP1VL, VP2VL
-9
-8
-7
V
Horizontal shift register
High
VP1HH, VP2HH
0
3
6
V
clock voltage
Low
VP1HL, VP2HL
-9
-8
-7
V
Summing gate voltage
High
VsGH
0
3
6
V
Low
VsGL
-9
-8
-7
V
Reset gate voltage
High
VRGH
0
3
6
V
Low
VRGL
-9
-8
-7
V
Transfer gate voltage
High
Low
VTGH
VTGL
0
-9
3
-8
6
V
-7
V
+5 V power supply voltage
Vcc
4.75
5
5.25
V
Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Signal output frequency*¹
fc
-
1
-
MHz
Vertical shift register capacitance
CP1v, CP2v
-
60000
-
pF
Horizontal shift register
capacitance
S8980
S10810-11
CP1H, CP2H
-
-
350
550
-
-
pF
S8980
-
20
-
Summing gate capacitance
S10810-11
CsG
-
220
pF
-
Reset gate capacitance
S8980
S10810-11
CRG
-
-
20
220
-
-
pF
S8980
-
250
-
Transfer gate capacitance _S10810-11
CTG
-
450
-
pF
Charge transfer efficiency*²
CTE
0.99995
0.99998
-
-
DC output level*³
VOut
5
8
11
V
Output impedance*³
Zo
-
500
-
Ω
Power dissipation*³ *⁴
P
-
75
-
mW
+5 V power supply current
S8980
S10810-11
Icc
-
-
1
2
-
-
mA
*1: In case the of the S8980, maximum frequency strongly depends on a peripheral circuit and cable length.
*2: Measured at half of the full well capacity. CTE is defined per pixel.
*3: VOD=15 V
*4: Power dissipation of the on-chip amplifier
2