S12071_15 Datasheet, PDF (10/11 Pages) Hamamatsu Corporation – CCD area image sensor

CCD area image sensor
S12071
Specifications of built-in TE-cooler (Typ. vacuum condition)
Parameter
Symbol
Condition
Specification
Unit
Internal resistance
Rint Ta=25 °C
Maximum heat absorption of built-in TE-cooler*¹⁹ *²⁰ Qmax
0.65 ± 0.13
Ω
9.9
W
*19: This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum
current is supplied to the sensor.
*20: Heat absorption at Tc=Th
Tc: Temperature on the cooling side of TE-cooler
Th: Temperature on the heat dissipating side of TE-cooler.
(Typ. Th=25 °C)
6
30
Voltage vs. current
CCD temperature vs.current
5
20
4
10
3
0
2
-10
1
-20
0
-30
0
1
2
3
4
5
Current (A)
KMPDB0371EA
To make the cooling side 0 °C, the temperature on the heat dissipating side must be 30 °C or less. As a guideline, use a heatsink
whose thermal resistance is no more than 1 °C/W.
Specifications of built-in temperature sensor
A thermistor chip is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation
between the thermistor resistance and absolute temperature is expressed by the following equation.
RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)
RT1: Resistance at absolute temperature T1 [K]
RT2: Resistance at absolute temperature T2 [K]
BT1/T2: B constant [K]
1 MΩ
(Typ. Ta=25 °C)
The characteristics of the thermistor used are as follows.
R298=10 kΩ
B298/323=3450 K
100 kΩ
10 kΩ
220
240
260
280
Temperature (K)
300
KMPDB0111JB
10