GS74117AX Datasheet, PDF (8/12 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM

Write Cycle 1: WE control
Address
OE
CE
UB, LB
WE
Data In
Data Out
Write Cycle 2: CE control
Address
OE
CE
UB, LB
WE
Data In
Data Out
tWC
tAW
tWR
tCW
tBW
tAS
tWP
tWHZ
tDW tDH
Data valid
tWLZ
High impedance
tWC
tAW
tWR1
tAS
tCW
tBW
tWP
tDW tDH
Data valid
High impedance
GS74117AX
Rev: 1.02 10/2002
8/12
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.