GS74117AX Datasheet, PDF (4/12 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM

GS74117AX
Capacitance
Parameter
Symbol
Test Condition
Input Capacitance
CIN
Output Capacitance
COUT
VIN = 0 V
VOUT = 0 V
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Symbol
Input Leakage
Current
IIL
Output Leakage
Current
ILO
Output High Voltage
VOH
Output Low Voltage
VOL
Test Conditions
VIN = 0 to V_DD
Output High Z
VOUT = 0 to V_DD
IOH = –4 mA
ILO = +4 mA
Max
5
7
Min
– 1 uA
–1 uA
2.4
—
Unit
pF
pF
Max
1 uA
1 uA
—
0.4 V
Power Supply Currents
Parameter Symbol
Test Conditions
Operating
Supply
IDD
Current
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
Standby
Current
ISB1
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
Standby
Current
ISB2
CE ≥ VDD – 0.2 V
All other inputs
≥ VDD – 0.2 V or ≤ 0.2 V
0 to 70°C
–40 to 85°C
Unit
7 ns 8 ns 10 ns 12 ns 7 ns 8 ns 10 ns 12 ns
150 130 105 90 160 140 115 100 mA
28 30 25 22 38 40 35 32 mA
10
20
mA
Rev: 1.02 10/2002
4/12
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.