GS74117AX Datasheet, PDF (1/12 Pages) GSI Technology – 256K x 16 4Mb Asynchronous SRAM

GS74117AX
FP-BGA
Commercial Temp
Industrial Temp
256K x 16
4Mb Asynchronous SRAM
7, 8, 10, 12 ns
3.3 V V_DD
Center V_DD and V_SS
Features
Fine Pitch BGA 256K x 16 Bump Configuration
• Fast access time: 7, 8, 10, 12 ns
• CMOS low power operation: 150/130/105/95 mA at
minimum cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package:
X: 6 mm x 10 mm Fine Pitch Ball Grid Array
package
123456
A LB OE A0 A1 A2 NC
B DQ1 UB A3 A4 CE DQ16
C DQ3 DQ2 A5 A6 DQ15 DQ14
D VSS DQ4 A17 A7 DQ13 VDD
E VDD DQ5 NC A16 DQ12 VSS
Description
The GS74117A is a high speed CMOS Static RAM organized
as 262,144 words by 16 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS74117A is available in a 6 x 10 mm Fine
Pitch BGA package.
Pin Descriptions
Symbol
A0–A17
DQ1–DQ16
CE
LB
UB
WE
OE
V_DD
V_SS
NC
Description
Address input
Data input/output
Chip enable input
Lower byte enable input
(DQ1 to DQ8)
Upper byte enable input
(DQ9 to DQ16)
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
F DQ6 DQ7 A8 A9 DQ10 DQ11
G DQ8 NC A10 A11 WE DQ9
H NC A12 A13 A14 A15 NC
Package X
6 x 10 mm Bump Pitch
Top View
Rev: 1.02 10/2002
1/12
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.