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GS73024AB Datasheet, PDF (8/12 Pages) GSI Technology – Asynchronous SRAM
Address
OE
CE
WE
Data In
Data Out
Address
OE
CE
WE
Data In
Data Out
Write Cycle 1: WE control
tWC
tAW
tWR
tCW
tAS
tWP
tWHZ
tDW
tDH
Data valid
tWLZ
High impedance
Write Cycle 2: CE control
tWC
tAW
tWR1
tAS
tCW
tWP
tDW
tDH
Data valid
High impedance
GS73024AB
Rev: 1.03 12/2005
8/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology