GS73024AB Datasheet, PDF (3/12 Pages) GSI Technology – Asynchronous SRAM

GS73024AB
Truth Table
CE
OE
WE
H
X
X
L
L
H
L
X
L
L
H
H
X: “H” or “L”
Mode
Not selected
Read
Write
Output disable
DQ0 to DQ23
High Z
Data Out
Data In
High Z
V_DD Current
ISB1, ISB2
I_DD
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
Input Voltage
Output Voltage
Allowable BGA power dissipation
Storage temperature
VDD
VIN
VOUT
PD
T_STG
–0.5 to +4.6
V
–0.5 to V_DD +0.5
V
(≤ 4.6 V max.)
–0.5 to V_DD +0.5
V
(≤ 4.6 V max.)
1.5
W
–55 to 150
o_C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.03 12/2005
3/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology