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GS73024AB Datasheet, PDF (4/12 Pages) GSI Technology – Asynchronous SRAM
GS73024AB
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Supply Voltage for -10/12
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
VDD
3.0
VDD
3.135
VIH
2.0
VIL
–0.3
TAc
0
TAi
–40
3.3
3.6
3.3
3.6
—
VDD+0.3
—
0.8
—
70
—
85
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Input Capacitance
I/O Capacitance
CIN
COUT
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Test Condition
Max
VIN = 0 V
5
VOUT = 0 V
7
DC I/O Pin Characteristics
Parameter
Input Leakage Current
Symbol
IIL
Output Leakage Current
IOL
Output High Voltage
VOH
Output Low Voltage
VOL
Test Conditions
VIN = 0 to VDD
Output High Z,
VOUT = 0 to VDD
IOH = –4 mA
IOL = +4 mA
Min
–1 uA
–1 uA
2.4
—
Unit
V
V
V
V
oC
oC
Unit
pF
pF
Max
1 uA
1 uA
—
0.4 V
Rev: 1.03 12/2005
4/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology