GS72116ATP Datasheet, PDF (6/18 Pages) GSI Technology – 128K x 16 2Mb Asynchronous SRAM

GS72116ATP/J/T/U
Power Supply Currents
0 to 70°C
–40 to 85°C
Parameter Symbol Test Conditions
7 ns 8 ns 10 ns 12 ns 7 ns 8 ns 10 ns 12 ns
Operating
Supply
Current
IDD (max)
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
145 mA 125 mA 100 mA 85 mA 150 mA 130 mA 105 mA 90 mA
Standby
Current
ISB1
(max)
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
25 mA 20 mA 20 mA 15 mA 30 mA 25 mA 25 mA 20 mA
CE ≥ V_DD – 0.2 V
Standby
Current
ISB2
(max)
All other inputs
≥ V_DD – 0.2 V or
5 mA
≤ 0.2 V
10 mA
AC Test Conditions
Parameter
Conditions
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
VIH = 2.4 V
VIL = 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
Output Load 1
DQ
50Ω 30pF¹
VT = 1.4 V
Output Load 2
3.3 V
DQ
589Ω
5pF^{1 434Ω}
Rev: 1.04a 10/2002
6/18
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.