GS72116ATP Datasheet, PDF (4/18 Pages) GSI Technology – 128K x 16 2Mb Asynchronous SRAM

GS72116ATP/J/T/U
Truth Table
CE
OE
WE
LB
UB
H
X
X
X
X
L
L
L
L
H
L
H
H
L
L
L
L
X
L
L
H
H
L
L
H
H
X
X
L
X
X
H
H
Note: X: “H” or “L”
DQ1 to DQ8
Not Selected
Read
Read
High Z
Write
Write
Not Write, High Z
High Z
High Z
DQ9 to DQ16
Not Selected
Read
High Z
Read
Write
Not Write, High Z
Write
High Z
High Z
VDD Current
ISB1, ISB2
IDD
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to V_DD +0.5
(≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to V_DD +0.5
(≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
o_C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec-
ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device
reliability.
Rev: 1.04a 10/2002
4/18
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.