GS74104TP Datasheet, PDF (5/12 Pages) GSI Technology – 1M x 4 4Mb Asynchronous SRAM

GS74104TP/J
Power Supply Currents
0 to 70°C
Parameter Symbol Test Conditions
8 ns 10 ns 12 ns
Operating
Supply
Current
IDD (max)
Standby
Current
ISB1 (max)
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
150 mA 125 mA 110 mA
70 mA 65 mA 60 mA
Standby
Current
ISB2 (max)
CE ≥ VDD - 0.2V
All other inputs
≥ VDD - 0.2V or ≤ 0.2V
30 mA
15 ns
90 mA
55 mA
–40 to 85°C
10 ns 12 ns 15 ns
135 mA 120 mA 100 mA
75 mA 70 mA 65 mA
40 mA
AC Test Conditions
Parameter
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
Conditions
VIH = 2.4 V
VIL = 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
Output Load 1
DQ
50Ω 30pF¹
VT = 1.4 V
Output Load 2
3.3 V
DQ
589Ω
5pF^{1 434Ω}
Rev: 1.07 1/2001
5/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.