GS74104TP Datasheet, PDF (4/12 Pages) GSI Technology – 1M x 4 4Mb Asynchronous SRAM

Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
CIN
COUT
Test Condition
VIN = 0 V
VOUT = 0 V
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Symbol
Input Leakage
Current
IIL
Output Leakage
Current
ILO
Output High Voltage
VOH
Output Low Voltage
VOL
Test Conditions
VIN = 0 to V_DD
Output High Z
VOUT = 0 to V_DD
IOH = –4mA
ILO = +4mA
Max
5
7
Min
– 1 uA
–1 uA
2.4
—
Unit
pF
pF
Max
1 uA
1 uA
—
0.4 V
GS74104TP/J
Rev: 1.07 1/2001
4/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.