English
Language : 

GS74104TP Datasheet, PDF (1/12 Pages) GSI Technology – 1M x 4 4Mb Asynchronous SRAM
GS74104TP/J
SOJ, TSOP
Commercial Temp
Industrial Temp
1M x 4
4Mb Asynchronous SRAM
8, 10, 12, 15 ns
3.3 V VDD
Center VDD and VSS
Features
SOJ 1M x 4-Pin Configuraton
• Fast access time: 8, 10, 12, 15 ns
• CMOS low power operation: 150/125/110/90 mA at
minimum cycle time.
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
A4
1
A3
2
A2
3
A1
4
A0
5
CE
6
DQ1
7
32-pin
32
A5
31
A6
30
A7
29
A8
28
A9
27
OE
26
DQ4
• Package line up
J: 400 mil, 32-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
VDD
8
400 mil SOJ
25
VSS
VSS
9
24
VDD
DQ2
10
23
DQ3
WE
11
22
A10
Description
A19
12
A18
13
21
A11
20
A12
The GS74104 is a high speed CMOS Static RAM organized as
1,048,576 words by 4 bits. Static design eliminates the need for
external clocks or timing strobes. The GS operates on a single
A17
14
A16
15
A15
16
19
A13
18
A14
17
NC
3.3 V power supply and all inputs and outputs are TTL-com-
patible. The GS74104 is available in 400 mil SOJ and 400 mil
TSOP Type-II packages.
TSOP-II 1M x 4-Pin Configuration
Pin Descriptions
Symbol
A0–A19
DQ1–DQ4
CE
WE
OE
VDD
VSS
NC
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
NC
1
44
NC
NC
2
43
NC
NC
3
42
NC
A4
4
41
A5
A3
5
40
A6
A2
6
39
A7
A1
7
38
A8
A0
8
37
A9
CE
9
36
OE
DQ1
10
35
DQ4
VDD
11
44-pin
34
VSS
VSS
12
400 mil TSOP II 33
VDD
DQ2
13
32
DQ3
WE
14
31
A10
A19
15
30
A11
A18
16
29
A12
A17
17
28
A13
A16
18
27
A14
A15
19
26
NC
NC
20
25
NC
NC
21
24
NC
NC
22
23
NC
Rev: 1.07 1/2001
1/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.