GS71024 Datasheet, PDF (4/13 Pages) GSI Technology – 64K x 24 1.5Mb Asynchronous SRAM

GS71024T/U
Recommended Operating Conditions
Parameter
Symbol
Minimum
Typical
Maximum
Unit
Supply Voltage for -10/12/15
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
V_DD
3.0
V_DD
3.135
V_IH
2.0
V_IL
–0.3
T_Ac
0
T_Ai
–40
3.3
3.6
V
3.3
3.6
V
—
V_DD + 0.3
V
—
0.8
V
—
70
o_C
—
85
o_C
Notes:
1. Input overshoot voltage should be less than V_DD + 2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Test Condition
Maximum
Unit
Input Capacitance
C_IN
V_IN = 0 V
5
pF
I/O Capacitance
C_OUT
V_OUT = 0 V
7
pF
Notes:
1. Tested at T_A = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics
Parameter
Input Leakage Current
Symbol
I_IL
Output Leakage Current
I_OL
Output High Voltage
V_OH
Output Low Voltage
V_OL
Test Conditions
V_IN = 0 to V_DD
Output High Z, V_OUT = 0
to V_DD
I_OH = –4mA
I_OL = +4mA
Minimum
–1uA
–1uA
2.4
—
Maximum
1uA
1uA
—
0.4 V
Rev: 1.05 11/2004
4/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 1999, GSI Technology