GS8182Q18BD-300M Datasheet, PDF (21/35 Pages) GSI Technology – 18Mb SigmaQuad-IITM Burst of 2 SRAM

GS8182Q08/09/18/36BD-300M
Operating Currents
Parameter
Symbol
Test Conditions
Operating Current (x36): DDR
I_DD
Operating Current (x18): DDR
I_DD
Operating Current (x9): DDR
I_DD
Operating Current (x8): DDR
I_DD
Standby Current (NOP): DDR
I_SB1
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, I_OUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
V_DD = Max, I_OUT = 0 mA
Cycle Time ≥ t_KHKH Min
V_DD = Max, I_OUT = 0 mA
Cycle Time ≥ t_KHKH Min
V_DD = Max, I_OUT = 0 mA
Cycle Time ≥ t_KHKH Min
V_DD = Max, I_OUT = 0 mA
Cycle Time ≥ t_KHKH Min
Device deselected,
I_OUT = 0 mA, f = Max,
All Inputs ≤ 0.2 V or
≥ V_DD – 0.2 V
-300M
–55
to
125°C
985 mA
850 mA
850 mA
850 mA
Notes
2, 3
2, 3
2, 3
2, 3
260 mA
2, 4
Rev: 1.00a 11/2011
21/35
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology