GS8321ZV18 Datasheet, PDF (14/31 Pages) GSI Technology – 36Mb Pipelined and Flow Through Synchronous NBT SRAM

GS8321ZV18/32/36E-250/225/200/166/150/133
Absolute Maximum Ratings
(All voltages reference to V_SS)
Symbol
Description
Value
Unit
V_DD
Voltage on V_DD Pins
–0.5 to 3.6
V
V_DDQ
Voltage in V_DDQ Pins
–0.5 to 3.6
V
V_I/O
Voltage on I/O Pins
–0.5 to V_DDQ +0.5 (≤ 3.6 V max.)
V
V_IN
Voltage on Other Input Pins
–0.5 to V_DD +0.5 (≤ 3.6 V max.)
V
I_IN
Input Current on Any Pin
+/–20
mA
I_OUT
Output Current on Any I/O Pin
+/–20
mA
P_D
Package Power Dissipation
1.5
W
T_STG
Storage Temperature
–55 to 125
o_C
T_BIAS
Temperature Under Bias
–55 to 125
o_C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
Symbol Min.
Typ.
Max.
Unit Notes
1.8 V Supply Voltage
V_DD1
1.6
1.8
2.0
V
1.8 V V_DDQ I/O Supply Voltage
V_DDQ1
1.6
1.8
2.0
V
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < V_DDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
Rev: 1.03 11/2004
14/31
© 2003, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.