GS816218BB-V Datasheet, PDF (14/31 Pages) GSI Technology – 1M x 18, 512K x 36 18MbS/DCD Sync Burst SRAMs

Preliminary
GS8162xxBB-xxxV
Operating Currents
-250
-200
-150
Parameter
Test Conditions
Mode
Symbol
0
–40
0
–40
0
–40 _Unit
to
to
to
to
to
to
70°C 85°C 70°C 85°C 70°C 85°C
Pipeline
I_DD
I_DDQ
(x72)
Flow Through
I_DD
I_DDQ
350
75
360
75
290
55
300
55
230
40
240
40
mA
265
50
275
50
230
45
240
45
210
40
220
40
mA
Operating
Current
Device Selected;
All other inputs
≥V_IH or ≤ V_IL
Output open
Pipeline
(x32/
I_DD
I_DDQ
x36)
Flow Through
I_DD
I_DDQ
290
40
300
40
240
30
250
30
190
20
200
20
mA
220
20
230
20
190
15
200
15
175
15
185
15
mA
Pipeline
I_DD
I_DDQ
(x18)
Flow Through
I_DD
I_DDQ
260
20
270
20
215
15
225
15
170
15
180
15
mA
200
10
210
10
175
10
185
10
160
10
170
10
mA
Standby
Current
ZZ ≥ V_DD – 0.2 V
Pipeline
I_SB
—
Flow Through
I_SB
40
50
40
50
40
50
mA
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥ V_IH or ≤ V_IL
Pipeline
I_DD
—
Flow Through
I_DD
85
90
75
80
60
65
mA
60
65
50
55
50
55
mA
Notes:
1. I_DD and I_DDQ apply to any combination of V_DD and V_DDQ operation.
2. All parameters listed are worst case scenario.
Rev: 1.01a 6/2006
14/31
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2004, GSI Technology