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GS816036DGT-250IV Datasheet, PDF (14/23 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs | |||
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GS816018/32/36DGT-xxxV
AC Test Conditions
Parameter
Conditions
Input high level
Input low level
VDD â 0.2 V
0.2 V
Input slew rate
1 V/ns
Input reference level
Output reference level
VDD/2
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
Figure 1
Output Load 1
DQ
50ï
30pF*
VDDQ/2
* Distributed Test Jig Capacitance
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
FT Input Current
Output Leakage Current
1.8 V Output High Voltage
2.5 V Output High Voltage
1.8 V Output Low Voltage
2.5 V Output Low Voltage
Symbol
IIL
IIN
IOL
VOH1
VOH2
VOL1
VOL2
Test Conditions
VIN = 0 to VDD
VDD ï³ VIN ï³ 0 V
Output Disable, VOUT = 0 to VDD
IOH = â4 mA, VDDQ = 1.7 V
IOH = â8 mA, VDDQ = 2.375 V
IOL = 4 mA
IOL = 8 mA
Min
Max
â1 uA
1 uA
â100 uA
â1 uA
VDDQ â 0.4 V
1.7 V
â
â
100 uA
1 uA
â
â
0.4 V
0.4 V
Rev: 1.03a 9/2013
14/22
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology
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