GS816036DGT-250IV Datasheet, PDF (13/23 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

GS816018/32/36DGT-xxxV
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Junction Temperature
(Commercial Range Versions)
T_J
0
25
85
C
Junction Temperature
(Industrial Range Versions)*
T_J
–40
25
100
C
Note:
* The part numbers of Industrial Temperature Range versions end with the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Thermal Impedance
Package
Test PCB
Substrate
JA (C°/W)
Airflow = 0 m/s
 JA (C°/W)
Airflow = 1 m/s
 JA (C°/W)
Airflow = 2 m/s
JB (C°/W)  JC (C°/W)
100 TQFP
4-layer
35.7
31.0
29.4
27.0
8.4
Notes:
1. Thermal Impedance data is based on a number of samples from mulitple lots and should be viewed as a typical number.
2. The characteristics of the test fixture PCB influence reported thermal characteristics of the device. Be advised that a good thermal path to
the PCB can result in cooling or heating of the RAM depending on PCB temperature.
Undershoot Measurement and Timing
Overshoot Measurement and Timing
V_IH
20% tKC
V_DD + 2.0 V
V_SS
50%
50%
V_DD
V_SS – 2.0 V
20% tKC
V_IL
Note:
Input Under/overshoot voltage must be –2 V > Vi < V_DDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
Capacitance
(T_A = 25^oC, f = 1 MHZ, V_DD = 2.5 V)
Parameter
Input Capacitance
Input/Output Capacitance
Note:
These parameters are sample tested.
Symbol
C_IN
C_I/O
Test conditions
V_IN = 0 V
V_OUT = 0 V
Typ. Max. Unit
8
10
pF
12
14
pF
Rev: 1.03a 9/2013
13/22
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology