GS816036DGT-250IV Datasheet, PDF (12/23 Pages) GSI Technology – 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

GS816018/32/36DGT-xxxV
Absolute Maximum Ratings
(All voltages reference to V_SS)
Symbol
Description
Value
Unit
V_DD
V_DDQ
V_I/O
V_IN
I_IN
I_OUT
P_D
Voltage on V_DD Pins
Voltage on V_DDQ Pins
Voltage on I/O Pins
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
Package Power Dissipation
–0.5 to 4.6
V
–0.5 to V_DD
V
–0.5 to V_DD +0.5 ( 4.6 V max.)
V
–0.5 to V_DD +0.5 ( 4.6 V max.)
V
+/–20
mA
+/–20
mA
1.5
W
T_STG
Storage Temperature
–55 to 125
o_C
T_BIAS
Temperature Under Bias
–55 to 125
o_C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges (1.8 V/2.5 V Version)
Parameter
1.8 V Supply Voltage
2.5 V Supply Voltage
1.8 V V_DDQ I/O Supply Voltage
2.5 V V_DDQ I/O Supply Voltage
Symbol
Min.
Typ.
Max.
Unit
V_DD1
1.7
1.8
2.0
V
V_DD2
2.3
2.5
2.7
V
V_DDQ1
1.7
1.8
V_DD
V
V_DDQ2
2.3
2.5
V_DD
V
V_DDQ2 & V_DDQ1 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
V_DD Input High Voltage
V_IH
0.6*V_DD
—
V_DD + 0.3
V
V_DD Input Low Voltage
V_IL
–0.3
—
0.3*V_DD
V
Notes:
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the
device.
2. V_IH (max) must be met for any instantaneous value of V_DD.
3. V_DD needs to power-up before or at the same time as V_DDQ to make sure V_IH (max) is not exceeded.
Rev: 1.03a 9/2013
12/22
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2011, GSI Technology