GA05JT12-CAL_16 Datasheet, PDF(9/12 Page) GeneSiC Semiconductor, Inc.

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GA05JT12-CAL_16 Datasheet, PDF (9/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

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Die Datasheet

GA05JT12-CAL

C: Proportional Gate Current Driving

For applications in which the GA05JT12-CAL will operate over a wide range of drain current conditions, it may be beneficial to drive the device

using a proportional gate drive topology to optimize gate drive power consumption. A proportional gate driver relies on instantaneous drain

current ID feedback to vary the steady state gate current IG,steady supplied to the GA05JT12-CAL

C:1: Voltage Controlled Proportional Driver

The voltage controlled proportional driver relies on a gate drive IC to detect the GA05JT12-CAL drain-source voltage VDS during on-state to

sense ID. The gate drive IC will then increase or decrease IG,steady in response to ID. This allows IG,steady, and thus the gate drive power

consumption, to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A high voltage diode connected between the

drain and sense protects the IC from high-voltage when the driver and GA05JT12-CAL are in off-state. A simplified version of this topology is

shown in Figure 23, additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/

Gate Signal

Sense

Proportional

Gate Current

Driver

Signal

Output

HV Diode

IG,steady

SiC SJT

Figure 23: Simplified Voltage Controlled Proportional Driver

C:2: Current Controlled Proportional Driver

The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback ID of the GA05JT12-

CAL during on-state to supply IG,steady into the device gate. IG,steady will then increase or decrease in response to ID. at a fixed forced current gain

which is set be the turns ratio of the transformer, hforce = ID / IG = N2 / N1. GA05JT12-CAL is initially tuned-on using a gate current pulse supplied

into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady, and thus the gate drive power consumption, to be

reduced while ID is relatively low or for IG,steady to increase when is ID higher. A simplified version of this topology is shown in Figure 24,

additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/.

Feb 2016

Gate Signal

SiC SJT D

Figure 24: Simplified Current Controlled Proportional Driver

http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/

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