GA05JT12-CAL_16 Datasheet, PDF (2/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

Die Datasheet
GA05JT12-CAL
Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
A: On State
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
B: Off State
Drain Leakage Current
Gate Leakage Current
RDS(ON)
VGS,SAT
hFE
ID = 5 A, Tj = 25 °C
ID = 5 A, Tj = 150 °C
ID = 5 A, Tj = 175 °C
ID = 5 A, ID/IG = 40, Tj = 25 °C
ID = 5 A, ID/IG = 30, Tj = 175 °C
VDS = 8 V, ID = 5 A, Tj = 25 °C
VDS = 8 V, ID = 5 A, Tj = 125 °C
VDS = 8 V, ID = 5 A, Tj = 175 °C
VDS = 1200 V, VGS = 0 V, Tj = 25 °C
IDSS
VDS = 1200 V, VGS = 0 V, Tj = 150 °C
VDS = 1200 V, VGS = 0 V, Tj = 175 °C
ISG
VSG = 20 V, Tj = 25 °C
Section III: Dynamic Electrical Characteristics
Min.
Value
Typical
Max. ^Unit
Notes
180
325
mΩ Fig. 4
370
3.45
3.22
V
Fig. 7
80
52
–
Fig. 5
47
1
1
μA
Fig. 8
2
20
nA
Parameter
Symbol
Conditions
Min.
A: Capacitance and Gate Charge
Input Capacitance
Reverse Transfer/Output Capacitance
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
B: Switching¹
Ciss
Crss/Coss
EOSS
Coss,tr
VGS = 0 V, VDS = 800 V, f = 1 MHz
VDS = 800 V, f = 1 MHz
VGS = 0 V, VDS = 800 V, f = 1 MHz
ID = constant, VGS = 0 V, VDS = 0…800 V
Coss,er
QGS
QGD
QG
VGS = 0 V, VDS = 0…800 V
VGS = -5…3 V
VGS = 0 V, VDS = 0…800 V
Internal Gate Resistance – ON
Turn On Delay Time
Fall Time, VDS
Turn Off Delay Time
Rise Time, VDS
Turn On Delay Time
Fall Time, VDS
Turn Off Delay Time
Rise Time, VDS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
RG(INT-ON)
td(on)
tf
td(off)
tr
td(on)
tf
td(off)
tr
Eon
Eoff
Etot
Eon
Eoff
Etot
1 _{– All times are relative to the Drain-Source Voltage VDS}
VGS > 2.5 V, VDS = 0 V, Tj = 175 ºC
Tj = 25 ºC, VDS = 800 V,
ID = 5 A, Resistive Load
Refer to Section V for additional
driving information.
Tj = 175 ºC, VDS = 800 V,
ID = 5 A, Resistive Load
Tj = 25 ºC, VDS = 800 V,
ID = 5 A, Inductive Load
Refer to Section V.
Tj = 175 ºC, VDS = 800 V,
ID = 5 A, Inductive Load
Value
Typical
585
16
6
30
20
5
25
30
0.32
10
10
20
10
10
7
30
10
75
5
80
70
5
75
Max. ^{Unit Notes}
pF
Fig. 9
pF
Fig. 9
µJ Fig. 10
pF
pF
nC
nC
nC
Ω
ns
ns Fig. 11, 13
ns
ns Fig. 12, 14
ns
ns Fig. 11
ns
ns Fig. 12
µJ Fig. 11, 13
µJ Fig. 12, 14
µJ
µJ Fig. 11
µJ Fig. 12
µJ
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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