GA05JT12-CAL_16 Datasheet, PDF (12/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

Die Datasheet
GA05JT12-CAL
Section VIII: SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/sjt/GA05JT12-CAL_SPICE.pdf) into LTSPICE
(version 4) software for simulation of the GA05JT12-CAL.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision: 2.1
$
*
$Date: 29-JAN-2015
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2015 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model GA05JT12 NPN
+ IS
9.8338E-48
+ ISE
1.0733E-26
+ EG
3.23
+ BF
92
+ BR
0.55
+ IKF
5000
+ NF
1
+ NE
2
+ RB
10.49
+ IRB
0.002
+ RBM
0.32
+ RE
0.003
+ RC
0.18
+ CJC
230E-12
+ VJC
3.438
+ MJC
0.498
+ CJE
568E-12
+ VJE
2.862
+ MJE
0.458
+ XTI
3
+ XTB
-1.5
+ TRC1
6.5E-3
+ VCEO
1200
+ ICRATING 5
+ MFG
GeneSiC_Semiconductor
*
* End of GA05JT12 SPICE Model
Feb 2016
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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