GA10JT12-263_15 Datasheet, PDF (7/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

GA10JT12-263
Section V: Driving the GA10JT12-263
Drive Topology
TTL Logic
Constant Current
High Speed – Boost Capacitor
High Speed – Boost Inductor
Proportional
Pulsed Power
Gate Drive Power
Consumption
High
Medium
Medium
Low
Lowest
Medium
Switching
Frequency
Low
Medium
High
High
High
N/A
Application Emphasis
Wide Temperature Range
Wide Temperature Range
Fast Switching
Ultra Fast Switching
Wide Drain Current Range
Pulse Power
Availability
Coming Soon
Coming Soon
Production
Coming Soon
Coming Soon
Coming Soon
A: Static TTL Logic Driving
The GA10JT12-263 may be driven with direct (5 V) TTL logic and current amplification. The amplified current level of the supply must meet or
exceed the steady state gate current (I_G,steady) required to operate the GA10JT12-263. Minimum I_G,steady is dependent on the anticipated drain
current I_D through the SJT and the DC current gain h_FE, it may be calculated from the following equation. An accurate value of the h_FE may be
read from Figure 4. An optional resistor R_G may be used in series with the gate pin to trim I_G,steady, also an optional capacitor C_G may be added
in parallel with R_G to facilitate faster SJT switching if desired, further details on these options are given in the following section.
𝐼𝐼_{𝐺𝐺 ,í µí± í µí± í µí± í µí± í µí± í µí± í µí± í µí± í µí± í µí± í µí± í µí±} 
≈
𝐼𝐼_{𝐷𝐷}
ℎ_{𝐹𝐹𝐹𝐹} (𝑇𝑇,
𝐼𝐼_{𝐷𝐷} )
∗
1.5
5V
TTL
Gate Signal
5/0V
TTL i/p
D
C_G
R_{G G}
I_G,steady
GR
S
Figure 21: TTL Gate Drive Schematic
B: High Speed Driving
The SJT is a current controlled transistor which requires a positive gate current for turn-on and to remain in on-state. An idealized gate current
waveform for ultra-fast switching of the SJT while maintaining low gate drive losses is shown in Figure 22, it features a positive current peak
during turn-on, a negative current peak during turn-off, and continuous gate current during on-state.
Figure 22: An idealized gate current waveform for fast switching of an SJT.
An SJT is rapidly switched from its blocking state to on-state when the necessary gate charge, Q_G, for turn-on is supplied by a burst of high
gate current, I_G,on, until the SJT gate-source capacitance, C_GS, and gate-drain capacitance, C_GD, are fully charged.
𝑄𝑄_{𝑜𝑜𝑜𝑜} = 𝐼𝐼_{𝐺𝐺,𝑜𝑜𝑜𝑜} ∗ ₁
𝑄𝑄_{𝑜𝑜𝑜𝑜} ≥ 𝑄𝑄_{𝑔𝑔} + 𝑄𝑄_{𝑔𝑔}
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 7 of 11