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GA10JT12-263_15 Datasheet, PDF (1/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor | |||
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Normally â OFF Silicon Carbide
Junction Transistor
Features
⢠175 °C Maximum Operating Temperature
⢠Gate Oxide Free SiC Switch
⢠Optional Gate Return Pin
⢠Exceptional Safe Operating Area
⢠Excellent Gain Linearity
⢠Temperature Independent Switching Performance
⢠Low Output Capacitance
⢠Positive Temperature Coefficient of RDS,ON
⢠Suitable for Connecting an Anti-parallel Diode
Advantages
⢠Compatible with Si MOSFET/IGBT Gate Drive ICs
⢠> 20 µs Short-Circuit Withstand Capability
⢠Lowest-in-class Conduction Losses
⢠High Circuit Efficiency
⢠Minimal Input Signal Distortion
⢠High Amplifier Bandwidth
GA10JT12-263
Package
VDS
= 1200 V
RDS(ON)
= 100 mΩ
ID (@ 25°C)
= 25 A
ID (@ 150°C)
=
10 A
hFE (@ 25°C)
= 80
Drain
TAB
Drain
(TAB)
Gate
(Pin 1)
1G2GR3S4S5S6S7S
7L D2PAK (TO-263-7L)
Applications
Gate Return
(Pin 2)
Source
(Pin 3, 4, 5, 6, 7)
Please note: The Source and Gate Return
pins are not exchangeable. Their exchange
might lead to malfunction.
⢠Down Hole Oil Drilling, Geothermal Instrumentation
⢠Hybrid Electric Vehicles (HEV)
⢠Solar Inverters
⢠Switched-Mode Power Supply (SMPS)
⢠Power Factor Correction (PFC)
⢠Induction Heating
⢠Uninterruptible Power Supply (UPS)
⢠Motor Drives
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 3
Section V: Driving the GA10JT12-263 ........................................................................................................... 7
Section VI: Package Dimensions ................................................................................................................. 11
Section VII: SPICE Model Parameters ......................................................................................................... 12
Section I: Absolute Maximum Ratings
Parameter
Drain â Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Gate Current
Continuous Gate Return Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate â Source Voltage
Reverse Drain â Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
ID
IG
IGR
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TC = 25°C
TC = 150°C
TVJ = 175 oC,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 800 V,
Non Repetitive
TC = 25 °C / 150 °C, tp > 100 ms
Value
1200
25
10
1.3
1.3
ID,max = 10
@ VDS ⤠VDSmax
>20
30
25
170 / 22
-55 to 175
Unit Notes
V
A
Fig. 17
A
Fig. 17
A
A
A
Fig. 19
µs
V
V
W Fig. 16
°C
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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