GA10JT12-263_15 Datasheet, PDF (12/12 Pages) GeneSiC Semiconductor, Inc. – OFF Silicon Carbide Junction Transistor

GA10JT12-263
Section VII: SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/sjt/GA10JT12-263_SPICE.pdf) into LTSPICE
(version 4) software for simulation of the GA10JT12-263.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 2.0
$
* $Date: 20-NOV-2015
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2015 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model GA10JT12 NPN
+ IS
9.833E-48
+ ISE
1.073E-26
+ EG
3.23
+ BF
87
+ BR
0.55
+ IKF
5000
+ NF
1
+ NE
2
+ RB
4.67
+ IRB
0.001
+ RBM
0.16
+ RE
0.005
+ RC
0.08
+ CJC
229.9E-12
+ VJC
3.22
+ MJC
0.492
+ CJE
1244E-9
+ VJE
2.86
+ MJE
0.465
+ XTI
3
+ XTB
-1.35
+ TRC1
7E-3
+ VCEO
1200
+ ICRATING 10
+ MFG
GeneSiC_Semiconductor
*
* End of GA10JT12 SPICE Model
Nov 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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