MB85R1002A Datasheet, PDF (6/16 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 1 M Bit (64 K x 16)

MB85R1002A
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Symbol
Condition
Input Leakage Current
Output Leakage Current
Operating Power Supply
Current
Standby Current
High Level Output Voltage
Low Level Output Voltage
|ILI| VIN = 0 V to VCC
|ILO|
VOUT = 0 V to VCC,
CE1 = VIH or OE = VIH
CE1 = 0.2 V, CE2 =
ICC VCC − 0.2 V,
Iout = 0 mA*¹
CE1 ≥ VCC − 0.2 V
CE2 ≤ 0.2 V*²
ISB ^{OE ≥ VCC − 0.2 V, WE ≥}
VCC − 0.2 V*²
LB ≥ VCC − 0.2 V, UB ≥
VCC − 0.2 V*²
VOH IOH = − 1.0 mA
VOL IOL = 2.0 mA
(within recommended operating conditions)
Value
Unit
Min
Typ
Max
⎯
⎯
TBD μA
⎯
⎯
TBD μA
⎯
TBD TBD mA
⎯
TBD TBD μA
VCC × 0.8 ⎯
⎯
⎯
⎯
V
0.4
V
*1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle.
Iout : output current
*2 : All pins other than setting pins should be input at the CMOS level voltages such as H ≥ VCC − 0.2 V, L ≤ 0.2 V.
6
DS501-00004-0v01-E