MB81EDS256445 Datasheet, PDF (47/52 Pages) Fujitsu Component Limited. – MEMORY Consumer FCRAM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Specific Memory for SiP

MB81EDS256445
(15) Self Refresh Entry and Exit *¹
CK
CK
CKE
CS
RAS
CAS
WE
BA
AP
Address
DM
DQS
DQ
tRP
tIS
BA
RA
RA
tREFC^*4,*5
High-Z
High-Z
PALL^*2
SELF
SELFX ^*3
*1 : RA = Row Address, BA = Bank Address, AP = Auto Precharge
*2 : All banks must be precharged prior to SELF REFRESH ENTRY (SELF) command.
*3 : SELF REFRESH EXIT (SELFX) command can be latched at the CK rising edge.
*4 : Either NOP or DESL command can be used during tREFC period.
*5 : CKE should be held High during tREFC period after SELFX command.
ACT
Don’t care
DS05-11456-1E
47