MB81EDS256445 Datasheet, PDF (1/52 Pages) Fujitsu Component Limited. – MEMORY Consumer FCRAM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Specific Memory for SiP

FUJITSU MICROELECTRONICS
DATA SHEET
DS05-11456-1E
MEMORY Consumer FCRAM^TM
CMOS
256M Bit (4 bank x 1M word x 64 bit)
Consumer Applications Specific Memory for SiP
MB81EDS256445
■ DESCRIPTION
The Fujitsu MB81EDS256445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double
Data Rate (LPDDR) SDRAM Interface containing 268,435,456 storages accessible in a 64-bit format.
MB81EDS256445 is suited for consumer application requiring high data band width with low power consumption.
* : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan
■ FEATURES
• 1 M word × 64 bit × 4 banks organization
• DDR Burst Read/Write Access Capability
-tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C)
-tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C)
• Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.95 V
• Junction Temperature:
TJ = − 10 °C to + 125 °C
• 1.8 V-CMOS compatible inputs
• Burst Length: 2, 4, 8, 16
• CAS latency: 2, 3, 4
• Clock Stop capability during idle periods
• Auto Precharge option for each burst access
• Configurable Driver Strength and Pre Driver Strength
• Auto Refresh and Self Refresh Modes
• Deep Power Down Mode
• Low Power Consumption
-IDD4R =300 mA Max @ 3.46 GByte/s
-IDD4W =330 mA Max @ 3.46 GByte/s
• 4 K refresh cycles / 4 ms (Tj ≤ +125 °C)
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2009.8